SI6926DQ vishay siliconix document number: 70624 s-49456erev. a, 17-dec-96 www.vishay.com faxback 408-970-5600 2-1 dual n-channel 2.5-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 20 0.035 @ v gs = 4.5 v 4.0 20 0.040 @ v gs = 3.0 v 3.7 0.045 @ v gs = 2.5 v 3.5 SI6926DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 4.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.2 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.25 maximum power dissipation a t a = 25 c p d 1.0 w maximum power dissipation a t a = 70 c p d 0.64 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 125 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI6926DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70624 s-49456erev. a, 17-dec-96
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.5 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 5 v 10 a dis os r i a v gs = 4.5 v, i d = 4.0 a 0.028 0.035 drain-source on-state resistance a r ds(on) v gs = 3.0 v, i d = 3.7 a 0.031 0.040 () v gs = 2.5 v, i d = 3.5 a 0.033 0.045 forward transconductance a g fs v ds = 10 v, i d = 4.0 a 18 s diode forward voltage a v sd i s = 1.25 a, v gs = 0 v 0.7 1.2 v dynamic b total gate charge q g v10vv45vi40a 12 20 c gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 4.0 a 1.4 nc gate-drain charge q gd 3.2 turn-on delay time t d(on) v10vr6 10 20 rise time t r v dd = 10 v, r l = 6 i 1 a v 10 v r 6 30 50 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 60 80 ns fall time t f 15 30 source-drain reverse recovery time t rr i f = 1.25 a, di/dt = 100 a/ s 50 90 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6926DQ vishay siliconix document number: 70624 s-49456erev. a, 17-dec-96 www.vishay.com faxback 408-970-5600 2-3
0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 036912 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0.01 0.02 0.03 0.04 0.05 0 4 8 12 16 20 0 300 600 900 1200 1500 1800 0 4 8 12 16 20 0 4 8 12 16 20 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 5 thru 2 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 4.0 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 4.5 v i d = 4.0 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 1.5 v 1 v 55 c 25 c v gs = 3.0 v
SI6926DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70624 s-49456erev. a, 17-dec-96
normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 3 10 2 11030 10 1 10 4 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) 0 0.01 0.02 0.03 0.04 0.05 12345 0.36 0.28 0.20 0.12 0.04 0.04 0.12 0.20 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 4.0 a i d = 250 a variance (v) v gs(th) 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 time (sec) power (w) 30 25 20 15 10 5 0 0.01 0.1 1 10 30
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